JMSSJ On-line, Vol. 45 (1997) No. 2, pp. 201-217
Application of SIMS to Oxygen Diffusion Measurement in Ceramics
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    Tatsuya KAWADA

    * Research Institute for Scientific Measurements, Tohoku University (2-1-1 Katahira, Aoba-ku, Sendai 980-77, Japan)

One of the most interesting features of secondary ion mass spectrometry (SIMS) is its ability to detect isotope ratio in a small area of a solid state sample. It enables to study isotope diffusion properties in solids. Experimental setup and data analysis for isotope exchange/SIMS measurement are introduced focusing on its application to oxygen transport study in ceramic materials. Fast diffusion paths and preferred surface reaction sites are visualized by sector type SIMS. Oxygen vacancy diffusion coefficient and chemical diffusion coefficient of nonstoichiometric oxides are also estimated from the isotope diffusion coefficient and thermodynamic data.

Key words: SIMS, Oxygen diffusion, isotope exchange, imaging

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